ace 8202 b dual n - channel enhancement mode field effect transistor with esd protection ver 1. 2 1 description the ace 8202 b uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 2.5v to 12v. it is esd protected. this device is suitable for use as a uni - directional or bi - d irectional load switch, facilitated by its common - drain configuration. features ? v ds (v)=20v ? i d =7.5a (v gs =4.5v) ? r ds(on ) <21 m (v gs =4.5v) ? r ds(on) <35 m (v gs =2.5v) ? esd protected: 2000v absolute maximum ratings parameter symbol max unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v continuous drain current *ac t a =25 i d 7.5 a t a = 7 0 6 pulsed drain current i dm 25 a power dissipation t a =25 p d 2.5 w t a =70 1.6 operating junction temperature / storage temperature range t j /t stg - 55/150 o c packaging type dfn3*3 - 8l
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 2 ordering i nformation ace 820 2 b xx + h electrical characteris tics t a =25 , unless otherwise noted . parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 20 v gate threshold voltage v gs(th) v d s =v gs , i d s =250ua 0.4 0.65 1 gate leakage current i gss v ds =0v, v gs = 12 v 6.5 10 ua zero gate voltage drain current i dss v ds =2 0 v, v gs =0v 1 ua maximum body - diode continuous current i s 2.5 a drain - source on - resistance r ds(on) v gs = 4.5 v, i d = 8 a 15.7 21 m v gs = 2.5 v, i d = 7 a 26 35 forward transconductance g fs v ds = 5 v,i d = 7 a 34 s diode forward voltage v sd i s d = 2.5 a, v gs =0v 0.77 1 v switching total gate charge q g v ds =1 0 v, v gs = 4.5 v, i d = 7 a 11 nc gate - source charge q gs 2 gate - drain charge q gd 3.2 turn - on time td(on) v gs = 5 v, r l = 2.5 , v ds = 10 v, r g en = 3 30 0 ns tr 600 turn - off time td(off) 790 tf 440 dynamic input capacitance ciss v gs =0v, v ds =10v, f=1mhz 920 pf output capacitance coss 155 reverse transfer capacitance crss 75 nn : dfn3*3 - 8l pb - free h alogen - free
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 3 note: 1. the value of rja is measured with t he device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. 2. repetit ive rating, pulse width limited by junction temperature. 3. the rja is the sum of the thermal impedence from junction to lead rjl and lead to ambient . 4. the static characteristics are obtained using <300 s pulses, duty cycle 0.5% max. 5. these tests a re performed with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. typical performance characteristics
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 4 typical perform ance characteristics
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 5 typical performance characteristics
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 6 packing information dfn3*3 - 8l
ace 8202 b dual n - channel enhancement mode field effect transistor with es d protection ver 1.2 7 notes a ce does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems a re devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected t o result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
|
